Etching rate of target in magnetron¶

The ions of the gas-discharge plasma in the magnetron fall on the target and knock the atoms out of it. The etching rate is how many nanometers of the target substance are etched per unit of time. In other words, this is how much thinner a target becomes per unit of time.

Notation:

\(e\) (e) is elementary_charge.
\(N_\text{A}\) (N_A) is avogadro_constant.

etching_rate¶: Target etching rate. See speed.

Symbol:: v
Latex:: \(v\)
Dimension:: velocity

ion_current_density¶: Ion flux current_density incident on the target.

Symbol:: j
Latex:: \(j\)
Dimension:: current/area

target_molar_mass¶: molar_mass of target atoms.

Symbol:: M
Latex:: \(M\)
Dimension:: mass/amount_of_substance

sputtering_coefficient¶: Sputtering coefficient. Shows how many target atoms are knocked out of the target by a single ion.

Symbol:: Y
Latex:: \(Y\)
Dimension:: dimensionless

target_density¶: Target density.

Symbol:: rho
Latex:: \(\rho\)
Dimension:: mass/volume

law¶

v = j * M * Y / (e * rho * N_A)

Latex:: \[v = \frac{j M Y}{e \rho N_\text{A}}\]